| 型号 | 制造商 | 描述 | 操作 |
| IXGH32N60B [更多] | IXYS Corporation | IGBT Transistors 60 Amps 600V 2.3 Rds RoHS: Compliant | 搜索 |
| IXGH32N60BU1 [更多] | IXYS Corporation | IGBT Transistors 60 Amps 600V 2.3 Rds RoHS: Compliant | 搜索 |
| IXGH32N60BD1 [更多] | IXYS Corporation | IGBT Transistors 60 Amps 600V 2.3 Rds RoHS: Compliant | 搜索 |
| 型号 | 制造商 | 描述 | 操作 |
| IXGH32N60BU1 [更多] | IXYS Corporation | IGBT Housing type: TO-247AD Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.3 V Current release time: 80 ns Power dissipation: 200 W
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