| 型号 | 制造商 | 描述 | 操作 |
| IXDN55N120D1 [更多] | IXYS Corporation | IGBT 1200V 100A W/DIODE SOT-227B RoHS: Compliant | pbFree: Yes | 搜索 查看资料 |
| 型号 | 制造商 | 描述 | 操作 |
| IXDN55N120D1 [更多] | IXYS Corporation | IXDN Series 1200 Vce 100 A 100 ns t(on) High Voltage IGBT - SOT-227B RoHS: Compliant | pbFree: Yes | 搜索 |
| 型号 | 制造商 | 描述 | 操作 |
| IXDN55N120D1 [更多] | IXYS Corporation | IGBT Transistors 55 Amps 1200V RoHS: Compliant | 搜索 |
| 型号 | 制造商 | 描述 | 操作 |
| IXDN55N120D1 [更多] | IXYS Corporation | Trans IGBT Chip N-CH 1.2KV 100A 4-Pin SOT-227B RoHS: Compliant | 搜索 |
| 型号 | 制造商 | 描述 | 操作 |
| IXDN55N120D1 [更多] | IXYS Corporation | Trans IGBT Chip N-CH 1.2KV 100A 4-Pin SOT-227B RoHS: Compliant | 搜索 |
| IXDN55N120D1 [更多] | IXYS Corporation | Trans IGBT Chip N-CH 1.2KV 100A 4-Pin SOT-227B RoHS: Compliant | 搜索 |
| IXDN55N120D1 [更多] | IXYS Corporation | Trans IGBT Chip N-CH 1.2KV 100A 4-Pin SOT-227B RoHS: Compliant | 搜索 |
| IXDN55N120D1 [更多] | IXYS Corporation | Trans IGBT Chip N-CH 1.2KV 100A 4-Pin SOT-227B RoHS: Compliant | 搜索 |
| IXDN55N120D1 [更多] | IXYS Corporation | Trans IGBT Chip N-CH 1.2KV 100A 4-Pin SOT-227B RoHS: Compliant | 搜索 |
| 型号 | 制造商 | 描述 | 操作 |
| IXDN55N120D1 [更多] | IXYS Corporation | IGBT, N-CH, 1.2KV, 100A, SOT-227B
| 搜索 |
| 型号 | 制造商 | 描述 | 操作 |
| IXDN55N120D1 [更多] | IXYS Corporation | IGBT Housing type: SOT-227B Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.5 V Current release time: 70 ns Power dissipation: 450 W
| 搜索 查看资料 |
