Multi-GateTransistorsInamulti-gatedevice,thechannelissurroundedbyseveralgatesonmultiplesurfaces,allowingmoreeffectivesuppressionofoff-stateleakagecurrent.Multiplegatesalsoallowenhancedcurrentintheonstate,alsoknownasdrivecurrent.Theseadvantagestranslatetolowerpowerconsumptionandenhanceddeviceperformance.Non-planardevicesarealsomorecompactthanconventionalplanartransistors,enablinghighertransistorden
Multi-Gate Transistors
In a multi-gate device, the channel is surrounded by several gates
onmultiple surfaces, allowing more effective suppression of off-state leakage current. Multiple gates also allow enhanced current in the on state, also known
asdrive current. These advantages translate to lower power consumption and enhanced device performance. Non-planar devices are also more compact than conventional planar transistors, enabling higher transistor density which translates to smaller overall microelectronics.
